Hot electron transport in heterostructures
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Abstract
The enhancement of electron mobility and high-field drift velocity in a HEMT (high electron mobility transistor)-type channel of AIGaAs/InGaAs/AIGaAs double barrier heterostructures by reducing the electron-interface phonon interaction is obtained. The significant change in the electron concentration in the channel of the modulation-doped AlGaAs/InGaAs/AlGaAs heterostructures at low electric fields is experimentally discovered.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Hot electron transport in heterostructures</title><author><name sortKey="Pozela, J" uniqKey="Pozela J">J. Pozela</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Semiconductor Physics Institute, Center for Physical Sciences and Technology</s1><s2>Vilnius 01108</s2><s3>LTU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Lituanie</country><wicri:noRegion>Vilnius 01108</wicri:noRegion></affiliation></author><author><name sortKey="Pozela, K" uniqKey="Pozela K">K. Pozela</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Semiconductor Physics Institute, Center for Physical Sciences and Technology</s1><s2>Vilnius 01108</s2><s3>LTU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Lituanie</country><wicri:noRegion>Vilnius 01108</wicri:noRegion></affiliation></author><author><name sortKey="Juciene, V" uniqKey="Juciene V">V. Juciene</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Semiconductor Physics Institute, Center for Physical Sciences and Technology</s1><s2>Vilnius 01108</s2><s3>LTU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Lituanie</country><wicri:noRegion>Vilnius 01108</wicri:noRegion></affiliation></author><author><name sortKey="Shkolnik, A" uniqKey="Shkolnik A">A. Shkolnik</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Ioffe Physicotechnical Institute, Russian Academy of Sciences, 26 Polytekhnicheskaya</s1><s2>194021 St Petersburg</s2><s3>RUS</s3><sZ>4 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>194021 St Petersburg</wicri:noRegion></affiliation><affiliation wicri:level="3"><inist:fA14 i1="03"><s1>Innolume GmbH, Konrad-Adenauer-Allee 11</s1><s2>44263 Dortmund</s2><s3>DEU</s3><sZ>4 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Rhénanie-du-Nord-Westphalie</region><region type="district" nuts="2">District d'Arnsberg</region><settlement type="city">Dortmund</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">11-0152792</idno><date when="2011">2011</date><idno type="stanalyst">PASCAL 11-0152792 INIST</idno><idno type="RBID">Pascal:11-0152792</idno><idno type="wicri:Area/Main/Corpus">003452</idno><idno type="wicri:Area/Main/Repository">002D13</idno></publicationStmt><seriesStmt><idno type="ISSN">0268-1242</idno><title level="j" type="abbreviated">Semicond. sci. technol.</title><title level="j" type="main">Semiconductor science and technology</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium Gallium Arsenides Mixed</term><term>Carrier density</term><term>Double barrier structure</term><term>Drift velocity</term><term>Electric field effects</term><term>Electron mobility</term><term>Electron-phonon interactions</term><term>Gallium Indium Arsenides Mixed</term><term>Heterostructures</term><term>High field</term><term>Hot electrons</term><term>Modulation doping</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Electron chaud</term><term>Mobilité électron</term><term>Champ intense</term><term>Vitesse dérive</term><term>Structure 2 barrières</term><term>Interaction électron phonon</term><term>Densité porteur charge</term><term>Dopage modulé</term><term>Aluminium Gallium Arséniure Mixte</term><term>Gallium Indium Arséniure Mixte</term><term>Effet champ électrique</term><term>Hétérostructure</term><term>InGaAs</term><term>AlGaAs</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The enhancement of electron mobility and high-field drift velocity in a HEMT (high electron mobility transistor)-type channel of AIGaAs/InGaAs/AIGaAs double barrier heterostructures by reducing the electron-interface phonon interaction is obtained. The significant change in the electron concentration in the channel of the modulation-doped AlGaAs/InGaAs/AlGaAs heterostructures at low electric fields is experimentally discovered.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0268-1242</s0></fA01><fA02 i1="01"><s0>SSTEET</s0></fA02><fA03 i2="1"><s0>Semicond. sci. technol.</s0></fA03><fA05><s2>26</s2></fA05><fA06><s2>1</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Hot electron transport in heterostructures</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>From heterostructures to nanostructures</s1></fA09><fA11 i1="01" i2="1"><s1>POZELA (J.)</s1></fA11><fA11 i1="02" i2="1"><s1>POZELA (K.)</s1></fA11><fA11 i1="03" i2="1"><s1>JUCIENE (V.)</s1></fA11><fA11 i1="04" i2="1"><s1>SHKOLNIK (A.)</s1></fA11><fA12 i1="01" i2="1"><s1>BIMBERG (Dieter)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Semiconductor Physics Institute, Center for Physical Sciences and Technology</s1><s2>Vilnius 01108</s2><s3>LTU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="02"><s1>Ioffe Physicotechnical Institute, Russian Academy of Sciences, 26 Polytekhnicheskaya</s1><s2>194021 St Petersburg</s2><s3>RUS</s3><sZ>4 aut.</sZ></fA14><fA14 i1="03"><s1>Innolume GmbH, Konrad-Adenauer-Allee 11</s1><s2>44263 Dortmund</s2><s3>DEU</s3><sZ>4 aut.</sZ></fA14><fA15 i1="01"><s1>Berlin Technical University</s1><s3>DEU</s3><sZ>1 aut.</sZ></fA15><fA20><s2>014025.1-014025.5</s2></fA20><fA21><s1>2011</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>21041</s2><s5>354000191849600250</s5></fA43><fA44><s0>0000</s0><s1>© 2011 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>10 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>11-0152792</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Semiconductor science and technology</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>The enhancement of electron mobility and high-field drift velocity in a HEMT (high electron mobility transistor)-type channel of AIGaAs/InGaAs/AIGaAs double barrier heterostructures by reducing the electron-interface phonon interaction is obtained. The significant change in the electron concentration in the channel of the modulation-doped AlGaAs/InGaAs/AlGaAs heterostructures at low electric fields is experimentally discovered.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70C63</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Electron chaud</s0><s5>02</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Hot electrons</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Mobilité électron</s0><s5>03</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Electron mobility</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Champ intense</s0><s5>04</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>High field</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Vitesse dérive</s0><s5>06</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Drift velocity</s0><s5>06</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Structure 2 barrières</s0><s5>07</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Double barrier structure</s0><s5>07</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Estructura 2 barrera</s0><s5>07</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Interaction électron phonon</s0><s5>08</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Electron-phonon interactions</s0><s5>08</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Densité porteur charge</s0><s5>09</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Carrier density</s0><s5>09</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Dopage modulé</s0><s5>10</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Modulation doping</s0><s5>10</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Doping modulado</s0><s5>10</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Aluminium Gallium Arséniure Mixte</s0><s2>NC</s2><s2>NA</s2><s5>11</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Aluminium Gallium Arsenides Mixed</s0><s2>NC</s2><s2>NA</s2><s5>11</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Mixto</s0><s2>NC</s2><s2>NA</s2><s5>11</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Gallium Indium Arséniure Mixte</s0><s2>NC</s2><s2>NA</s2><s5>12</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Gallium Indium Arsenides Mixed</s0><s2>NC</s2><s2>NA</s2><s5>12</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Mixto</s0><s2>NC</s2><s2>NA</s2><s5>12</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Effet champ électrique</s0><s5>13</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Electric field effects</s0><s5>13</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Hétérostructure</s0><s5>15</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Heterostructures</s0><s5>15</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>InGaAs</s0><s4>INC</s4><s5>52</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>AlGaAs</s0><s4>INC</s4><s5>53</s5></fC03><fN21><s1>101</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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